A novel concept for fast recovery diodes having junction charge extraction (JCE) regions

Author

Rahimo, Munaf T. ; Crees, D.E. ; Shammas, N.Y.A.

Author_Institution

Mitel Semicond., Lincoln, UK

fYear

1998

fDate

3-6 Jun 1998

Firstpage

309

Lastpage

312

Abstract

A novel concept for achievement of superior performance in modern fast power diodes is presented in this paper. The junction charge extraction diode (JCE) is based on the integration of low and high lifetime regions in a single structure using masked helium irradiation. This new technique enables us to achieve improved static and dynamic characteristics when compared to uniform and axial lifetime controlled diodes. Simulation and experimental results are presented in this paper to verify the new concept

Keywords

carrier lifetime; ion implantation; masks; p-n junctions; power semiconductor diodes; semiconductor device models; semiconductor device testing; Si:He; axial lifetime controlled diodes; dynamic characteristics; fast recovery diodes; junction charge extraction diode; junction charge extraction regions; lifetime region; low/high lifetime region integration; masked helium irradiation; power diodes; simulation; static characteristics; Doping; Helium; Insulated gate bipolar transistors; Ion implantation; Power electronics; Power engineering and energy; Semiconductor diodes; Shape control; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702695

Filename

702695