Title :
Time dependent reliability of the programmed metal electrode antifuse
Author :
Wong, Richard J. ; Gordon, Kathryn E. ; Chan, Andrew K.
Author_Institution :
QuickLogic Corp., Santa Clara, CA, USA
fDate :
April 30 1996-May 2 1996
Abstract :
The programmed amorphous silicon antifuse reliability is characterized for the first time as a time dependent phenomenon. Previously, the reliability has been characterized as a switch off or threshold behavior. Both the DC and AC read disturb are now shown to have a time dependence. The stress current and ambient temperature acceleration factors are discussed.
Keywords :
amorphous semiconductors; electric fuses; elemental semiconductors; field programmable gate arrays; metal-semiconductor-metal structures; semiconductor device reliability; semiconductor-metal boundaries; silicon; AC read disturb; DC read disturb; TiW-Si-TiW; ambient temperature acceleration; amorphous Si antifuse reliability; programmed metal electrode antifuse; stress current; time dependent reliability; Acceleration; Amorphous silicon; Electrodes; Insulation; Silicides; Stress; Switches; Temperature; Tungsten; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492056
