• DocumentCode
    3371964
  • Title

    Reduced temperature dependence of refractive index in TlInGaAs addition of Tl

  • Author

    Imada, A. ; Mukai, T. ; Fujiwara, A. ; Lee, H.-J. ; Hasegawa, S. ; Asahi, H.

  • Author_Institution
    Inst. of Sci. & Ind. Res., Osaka Univ., Japan
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    465
  • Lastpage
    468
  • Abstract
    Optical properties of TlInGaAs quaternary alloy were studied by spectroscopic ellipsometry (SE), reflectance, and transmittance. Spectroscopic ellipsometry and reflectance measurements suggest that TlInGaAs is a semiconductor system having a temperature-stable refractive index. The square of the absorption spectra, α2, measured by transmittance, also determined the temperature-stable E0 edge. It was found that the temperature coefficients of both refractive index and E0 edge of TlInGaAs are much smaller than those for InGaAs. These results facilitate the fabrication of the temperature-stable-wavelength optoelectronic devices using this alloy system.
  • Keywords
    ellipsometry; gallium arsenide; indium compounds; optical materials; reflectivity; refractive index; ternary semiconductors; thallium compounds; thermo-optical effects; TlInGaAs; absorption spectra; quaternary alloy; reflectance; refractive index; spectroscopic ellipsometry; transmittance; Absorption; Ellipsometry; Indium gallium arsenide; Optical device fabrication; Optical refraction; Optical variables control; Reflectivity; Refractive index; Spectroscopy; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442758
  • Filename
    1442758