DocumentCode :
3371964
Title :
Reduced temperature dependence of refractive index in TlInGaAs addition of Tl
Author :
Imada, A. ; Mukai, T. ; Fujiwara, A. ; Lee, H.-J. ; Hasegawa, S. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
465
Lastpage :
468
Abstract :
Optical properties of TlInGaAs quaternary alloy were studied by spectroscopic ellipsometry (SE), reflectance, and transmittance. Spectroscopic ellipsometry and reflectance measurements suggest that TlInGaAs is a semiconductor system having a temperature-stable refractive index. The square of the absorption spectra, α2, measured by transmittance, also determined the temperature-stable E0 edge. It was found that the temperature coefficients of both refractive index and E0 edge of TlInGaAs are much smaller than those for InGaAs. These results facilitate the fabrication of the temperature-stable-wavelength optoelectronic devices using this alloy system.
Keywords :
ellipsometry; gallium arsenide; indium compounds; optical materials; reflectivity; refractive index; ternary semiconductors; thallium compounds; thermo-optical effects; TlInGaAs; absorption spectra; quaternary alloy; reflectance; refractive index; spectroscopic ellipsometry; transmittance; Absorption; Ellipsometry; Indium gallium arsenide; Optical device fabrication; Optical refraction; Optical variables control; Reflectivity; Refractive index; Spectroscopy; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442758
Filename :
1442758
Link To Document :
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