DocumentCode
3371964
Title
Reduced temperature dependence of refractive index in TlInGaAs addition of Tl
Author
Imada, A. ; Mukai, T. ; Fujiwara, A. ; Lee, H.-J. ; Hasegawa, S. ; Asahi, H.
Author_Institution
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
465
Lastpage
468
Abstract
Optical properties of TlInGaAs quaternary alloy were studied by spectroscopic ellipsometry (SE), reflectance, and transmittance. Spectroscopic ellipsometry and reflectance measurements suggest that TlInGaAs is a semiconductor system having a temperature-stable refractive index. The square of the absorption spectra, α2, measured by transmittance, also determined the temperature-stable E0 edge. It was found that the temperature coefficients of both refractive index and E0 edge of TlInGaAs are much smaller than those for InGaAs. These results facilitate the fabrication of the temperature-stable-wavelength optoelectronic devices using this alloy system.
Keywords
ellipsometry; gallium arsenide; indium compounds; optical materials; reflectivity; refractive index; ternary semiconductors; thallium compounds; thermo-optical effects; TlInGaAs; absorption spectra; quaternary alloy; reflectance; refractive index; spectroscopic ellipsometry; transmittance; Absorption; Ellipsometry; Indium gallium arsenide; Optical device fabrication; Optical refraction; Optical variables control; Reflectivity; Refractive index; Spectroscopy; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442758
Filename
1442758
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