Highly reliable furnace-grown N/sub 2/O tunnel oxide for a microcontroller with embedded flash EEPROM

Author

Maiti, Bikas ; Shum, Danny ; Paulson, Wayne M. ; Chang, Ko-Min ; Tobin, Philip J. ; Weidner, Mark ; Kuo, Clinton

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1996

fDate

April 30 1996-May 2 1996

Firstpage

55

Lastpage

60

Abstract

The superior characteristics of furnace-grown N/sub 2/O-nitrided tunnel dielectric for a microcontroller with embedded flash are reported in this paper. These devices demonstrated excellent write and erase (W/E) endurance with small window closure in comparison to thermal oxide. After extended endurance stress, improved read disturb lifetime and good drain disturb characteristics were obtained with N/sub 2/O tunnel oxynitride.

Keywords

CMOS memory circuits; EPROM; integrated circuit reliability; integrated circuit technology; microcontrollers; nitridation; oxidation; tunnelling; drain disturb characteristics; embedded flash EEPROM; furnace-grown N/sub 2/O-nitrided tunnel oxide; microcontroller; oxynitride dielectric; read disturb lifetime; reliability; window closure; write/erase endurance; Dielectrics; EPROM; Hot carriers; Laboratories; Microcontrollers; Research and development; Secondary generated hot electron injection; Split gate flash memory cells; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International

Conference_Location

Dallas, TX, USA

Print_ISBN

0-7803-2753-5

Type

conf

DOI

10.1109/RELPHY.1996.492061

Filename

492061