DocumentCode :
3372061
Title :
A new oxide degradation mechanism for stresses in the Fowler-Nordheim tunneling regime
Author :
Martin, Andreas ; Suehle, John S. ; Chaparala, Prasad ; Sullivan, Paula O. ; Mathewson, Alan
fYear :
1996
fDate :
April 30 1996-May 2 1996
Firstpage :
67
Lastpage :
76
Abstract :
In this study, voltage and current stress measurements in the Fowler-Nordheim regime, performed on gate oxides (9 nm-28 nm), indicated that a ramped pre-stress prior to a constant stress can increase the time to breakdown in some cases. In the literature oxide breakdown is said to be related to a fixed amount of trapped oxide charge or to a fixed amount of generated traps in the oxide. However, these models cannot explain our experimental observations. Current-time, current-charge, voltage-time characteristics and results of high frequency pre-stresses have been extensively studied in order to gain information about the charge trapping properties of the virgin and pre-stressed oxides. It is concluded from experimental results that the rate of initial positive charge build up in the oxide during the constant stress is a key factor for oxide degradation and breakdown.
Keywords :
electric breakdown; tunnelling; Fowler-Nordheim tunneling; charge trapping; constant stress; current stress; current-charge characteristics; current-time characteristics; gate oxide degradation; high frequency pre-stress; ramped stress; time to breakdown; voltage stress; voltage-time characteristics; Breakdown voltage; Degradation; Educational institutions; Electric breakdown; Electron traps; Semiconductor device manufacture; Stress measurement; Time measurement; Tunneling; World Wide Web;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
Type :
conf
DOI :
10.1109/RELPHY.1996.492063
Filename :
492063
Link To Document :
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