DocumentCode
3372093
Title
Hybrid CMOS/memristor circuits
Author
Strukov, D.B. ; Stewart, D.R. ; Borghetti, J. ; Li, X. ; Pickett, M. ; Ribeiro, G. Medeiros ; Robinett, W. ; Snider, G. ; Strachan, J.P. ; Wu, W. ; Xia, Q. ; Yang, J. Joshua ; Williams, R.S.
Author_Institution
Dept. of Electr. & Comput. Eng., UC Santa Barbara, Santa Barbara, CA, USA
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
1967
Lastpage
1970
Abstract
This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principles. Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.
Keywords
CMOS integrated circuits; hybrid integrated circuits; memristors; hybrid CMOS/memristor circuits; Circuits; Memristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537020
Filename
5537020
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