DocumentCode :
3372111
Title :
A high-level current model for macro cells using dynamic levelization algorithm
Author :
Lee, Mu-Shun Matt ; Liao, Wei-Ting ; Zhu, Guan-Ming ; Liu, Chien-Nan Jimmy
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2011
fDate :
25-28 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
Since the power integrity problem has become one of the critical issues that limit the design performance, it is essential to obtain the supply current waveforms at early design stages to make efficient reduction of the supply noise. Therefore, a high-level macro current model is proposed in for logic blocks to provide quick current waveform estimation at RTL. However, due to the different arrival time of internal signals, it is not easy to accurately model the supply current of the whole logic blocks as some fixed templates. Therefore, a levelized high-level current model is proposed in this work for macro blocks. By grouping those gates with similar arrival time as a super-gate, the current waveform of this super-gate can be recorded easily with less error. Then, combining all triangles of every super-gate in time obtains a more accurate supply current waveform, especially for multi-peak cases. In order to consider the different arrival time of different input patterns, a dynamic levelization algorithm is also proposed. As shown in the experimental results, the average peak error of the proposed levelized current model is improved by almost 23% compared to the conventional single-stage current model.
Keywords :
integrated logic circuits; logic design; RTL; dynamic levelization algorithm; high-level current model; high-level macro current model; macrocells; power integrity problem; supply current waveform; Discrete cosine transforms; Estimation; Heuristic algorithms; Integrated circuit modeling; Logic gates; Mathematical model; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
Pending
Print_ISBN :
978-1-4244-8500-0
Type :
conf
DOI :
10.1109/VDAT.2011.5783581
Filename :
5783581
Link To Document :
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