Title :
Failure analysis of laser diodes using transmission electron microscopy
Author :
Matsuda, Tadamitsu ; Tsukiji, N. ; Iwase, F.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
31 May-4 June 2004
Abstract :
We carried out failure analysis of InGaAsP/InP buried hetero-structure laser diodes using transmission electron microscopy. Climb motion of dislocation half loops in a regrowth layer caused rapid degradation. Generations of dislocation micro-loops at regrown interfaces gradually reduced output power for long periods of operation. In a suddenly failed laser chip, we observed a melt mark elongated from a crack crossing an active layer.
Keywords :
III-V semiconductors; cracks; dislocations; failure analysis; gallium arsenide; gallium compounds; indium compounds; laser reliability; semiconductor device reliability; semiconductor lasers; transmission electron microscopy; InGaAsP-InP; buried heterostructure laser diodes; dislocation half loops; failure analysis; laser chip; transmission electron microscopy; Degradation; Diode lasers; Failure analysis; Indium phosphide; Milling; Optical fiber communication; Optical materials; Power generation; Research and development; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442769
