• DocumentCode
    3372271
  • Title

    Phase Noise and Frequency Stability of Very-High Frequency Silicon Nanowire Nanomechanical Resonators

  • Author

    Feng, X.L. ; He, R.R. ; Yang, P.D. ; Roukes, M.L.

  • Author_Institution
    Kavli Nanoscience Inst., Pasadena
  • fYear
    2007
  • fDate
    10-14 June 2007
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    We report measurements and analyses of noise characteristics of very-high frequency (VHF) silicon nanowire (SiNW) nanoelectromechanical systems (NEMS). VHF SiNW resonators vibrating at 1/7 1/9 ~200MHz typically have displacement sensitivity of ~5fm/Hz1/2 and force sensitivity of 50~250aN/Hz , set by thermomechanical fluctuations. They have ~1nm critical amplitude and intrinsic dynamic range of 90-110 dB. Amplifier noise and resistor thermal noise dominate the resonance detection, resulting in in compromised displacement noise floor (typically ges30 fm/Hz), dynamic range (reduced to 70~90 dB), and phase noise (ges20~30dB degradation). We develop SiNW-NEMS-based phase-locking techniques to investigate the phase noise and frequency stability performance. Frequency stability of ~0.1ppm and 71 resonant mass sensitivity of ~10 zg (1 zg=10-21 g) have been achieved.
  • Keywords
    frequency stability; micromechanical resonators; nanotechnology; nanowires; phase noise; silicon; Si; SiNW-NEMS-based phase-locking technique; VHF SiNW resonators; VHF silicon nanowire NEMS; amplifier noise; compromised displacement noise floor; frequency stability performance; nanoelectromechanical systems; phase noise; resistor thermal noise; resonance detection; resonant mass sensitivity; thermomechanical fluctuations; Dynamic range; Frequency measurement; Nanoelectromechanical systems; Noise measurement; Noise reduction; Phase noise; Resonance; Silicon; Stability; Thermal force; Frequency Stability; Nanoelectromechanical System; Nanowire; Phase Noise; Resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
  • Conference_Location
    Lyon
  • Print_ISBN
    1-4244-0842-3
  • Electronic_ISBN
    1-4244-0842-3
  • Type

    conf

  • DOI
    10.1109/SENSOR.2007.4300134
  • Filename
    4300134