• DocumentCode
    3372355
  • Title

    Electromigration design rules for bidirectional current

  • Author

    Tao, Jiang ; Chen, Jone F. ; Cheung, Nathan W. ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    1996
  • fDate
    April 30 1996-May 2 1996
  • Firstpage
    180
  • Lastpage
    187
  • Abstract
    Electromigration reliability of different metallization systems and structures under bidirectional current stress is studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at very low frequencies, the damage healing factor and lifetime under AC stress increases with increasing frequency. At high frequencies, the pure AC lifetime was found to be determined by the thermal migration instead of electromigration. All the observations are in agreement with an average current model indicating that while AC current contributes to self-heating, only the average (DC) current contributes to electromigration in all practical cases for interconnects and vias. The conclusion applies to all materials and geometries tested.
  • Keywords
    electromigration; metallisation; reliability; 200 MHz; AC stress; average current model; bidirectional current stress; damage healing factor; design rules; electromigration reliability; interconnect; lifetime; metallization; self-heating; thermal migration; via; Current density; Electromigration; Frequency; Geometry; Materials testing; Metallization; Plugs; System testing; Thermal stresses; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
  • Conference_Location
    Dallas, TX, USA
  • Print_ISBN
    0-7803-2753-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.1996.492079
  • Filename
    492079