DocumentCode
3372355
Title
Electromigration design rules for bidirectional current
Author
Tao, Jiang ; Chen, Jone F. ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1996
fDate
April 30 1996-May 2 1996
Firstpage
180
Lastpage
187
Abstract
Electromigration reliability of different metallization systems and structures under bidirectional current stress is studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at very low frequencies, the damage healing factor and lifetime under AC stress increases with increasing frequency. At high frequencies, the pure AC lifetime was found to be determined by the thermal migration instead of electromigration. All the observations are in agreement with an average current model indicating that while AC current contributes to self-heating, only the average (DC) current contributes to electromigration in all practical cases for interconnects and vias. The conclusion applies to all materials and geometries tested.
Keywords
electromigration; metallisation; reliability; 200 MHz; AC stress; average current model; bidirectional current stress; damage healing factor; design rules; electromigration reliability; interconnect; lifetime; metallization; self-heating; thermal migration; via; Current density; Electromigration; Frequency; Geometry; Materials testing; Metallization; Plugs; System testing; Thermal stresses; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location
Dallas, TX, USA
Print_ISBN
0-7803-2753-5
Type
conf
DOI
10.1109/RELPHY.1996.492079
Filename
492079
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