• DocumentCode
    3372377
  • Title

    Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis

  • Author

    Wu, Chunlei ; Tian, Li ; Wu, Miao ; Fan, Diwei

  • Author_Institution
    Freescale Semicond. (China) Ltd., Tianjin, China
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.
  • Keywords
    failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; current detection probe head; high voltage high current failure analysis; infrared optical beam induced resistance change; lock-in IR-OBIRCH analysis; Capacitors; Earth Observing System; Head; Laser transitions; Leakage current; Probes; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306245
  • Filename
    6306245