DocumentCode
3372377
Title
Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis
Author
Wu, Chunlei ; Tian, Li ; Wu, Miao ; Fan, Diwei
Author_Institution
Freescale Semicond. (China) Ltd., Tianjin, China
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.
Keywords
failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; current detection probe head; high voltage high current failure analysis; infrared optical beam induced resistance change; lock-in IR-OBIRCH analysis; Capacitors; Earth Observing System; Head; Laser transitions; Leakage current; Probes; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306245
Filename
6306245
Link To Document