Title :
Proton implantation of the power MOSFET to improve its built-in diode reverse recovery
Author :
Zhu, Ronghua ; Chow, T. Paul
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Proton implantation has been implemented in the power MOSFET to improve its built-in diode reverse recovery characteristics. The diode switching characteristics and the power MOSFET parameters have been measured before and after the proton implantation and for different annealing times. A sevenfold reduction in diode reverse recovery charge has been achieved with virtually no impact on other device parameters
Keywords :
annealing; doping profiles; ion implantation; power MOSFET; proton effects; semiconductor device testing; annealing times; built-in diode reverse recovery; built-in diode reverse recovery characteristics; device parameters; diode reverse recovery charge reduction; diode switching characteristics; power MOSFET; power MOSFET parameters; proton implantation; Annealing; Charge carrier lifetime; Electrons; Implants; MOSFET circuits; P-i-n diodes; Power MOSFET; Protons; Semiconductor diodes; Time measurement;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702698
