DocumentCode :
3372428
Title :
Monitoring gate and interconnect delay variations by using ring oscillators
Author :
Chen, Ying-Yen ; Lin, Chen-Tung ; Lee, Jin-Nung ; Wu, Chi-Feng
Author_Institution :
R&D Center, Realtek Semicond. Corp., Hsinchu, Taiwan
fYear :
2011
fDate :
25-28 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
With process variability increasing in advanced processes, it becomes more challenging to diagnose or debug a low-yield problem. For finding out the root causes of a low-yield problem, currently we rely on limited process data provided by foundries or diagnosis tools and physical failure analysis (PFA). Only relying on defect diagnosis analysis and PFA is not sufficient to quickly conclude with a specific process problem. For gathering more information about a process, we propose to embed a process monitor consisting of ring oscillators in a circuit. Our proposed monitor design can monitor both gate and interconnect delay variation. A comprehensive simulation has been conducted and the silicon results will be shown in this paper.
Keywords :
delays; elemental semiconductors; failure analysis; integrated circuit interconnections; oscillators; process monitoring; silicon; Si; defect diagnosis analysis; diagnosis tools; interconnect delay variations; low-yield problem; monitoring gate; physical failure analysis; ring oscillators; Delay; Integrated circuit interconnections; Libraries; Metals; Ring oscillators; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
Pending
Print_ISBN :
978-1-4244-8500-0
Type :
conf
DOI :
10.1109/VDAT.2011.5783597
Filename :
5783597
Link To Document :
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