DocumentCode
3372515
Title
High fT 0.05μm In0.52AlAs/In0.53GaAs HEMT´s with strained 5 nm InAs sub-channel on InP substrate
Author
Kim, Dae-Hyun ; Noh, Hun-Hee ; Lee Kang-Min ; Lee, Jae.-Hak. ; Feng, We ; Xie, Xiaogang ; Du, Quangang ; Jiang, Jian ; Seo, Kwang-Seok
Author_Institution
ISRC, Seoul Nat. Univ., South Korea
fYear
2004
fDate
31 May-4 June 2004
Firstpage
558
Lastpage
559
Abstract
An In0.52AlAs/In0.53GaAs HEMT with 5 nm InAs-inserted-channel into the In0.53GaAs channel was fabricated using 0.05 μm conventional T-shaped gate technology. The measured maximum transconductance (Gm,max) is above 1 S/mm even at a lower drain voltage of 0.7 V and current gain cutoff frequency (fT) is 409 GHz. This excellent performance is attributed to the combination of the suppression of short-channel effect and the superior transport in 5 nm InAs-inserted-channel design concept. Higher fT above 500 GHz is to be expected using the InAs-inserted-channel scheme, if reducing Lg down to sub-0.05μm range.
Keywords
III-V semiconductors; aluminium compounds; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; 0.05 mum; 0.7 V; 409 GHz; 5 nm; 500 GHz; HEMT; In0.52AlAs-In0.53GaAs; InAs; InP; T-shaped gate technology; current gain cutoff frequency; drain voltage; transconductance; Degradation; Etching; Fabrication; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442782
Filename
1442782
Link To Document