DocumentCode :
3372600
Title :
Sideways FIB TEM sample preparation for improved construction analysis in TEM
Author :
Chong, H.B. ; Van Leer, Brandon ; Narang, V. ; Ho, M.Y.
Author_Institution :
Device Anal. Eng., Adv. Micro Devices (Singapore) Pte Ltd., Singapore, Singapore
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
Conventional TEM sample preparation for full-stack BEOL construction analysis (CA) has several issues such as the difficulty of achieving full metal layers intact in a single lamella, and also a curtaining effect that adversely impacts TEM analysis. This paper presents and successfully demonstrates an alternative sample preparation technique for preparing CA samples with full-BEOL metal stack. The procedure involves changing the orientation of the lamella by rotating the sample during in situ FIB attachment and milling it sideways to achieve lamella thickness of 100 nm, with uniform thickness at the area of interest. With this new method, full metal layers can be preserved while minimizing the curtaining effect often observed in heterogeneous TEM sample preparation.
Keywords :
focused ion beam technology; semiconductor device manufacture; transmission electron microscopy; full metal layers; full-BEOL metal stack; full-stack BEOL construction analysis; improved construction analysis; in situ FIB attachment; lamella thickness; sideways FIB TEM sample preparation; single lamella; Coatings; Dielectrics; Ion beams; Manipulators; Metals; Milling; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306257
Filename :
6306257
Link To Document :
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