• DocumentCode
    3372600
  • Title

    Sideways FIB TEM sample preparation for improved construction analysis in TEM

  • Author

    Chong, H.B. ; Van Leer, Brandon ; Narang, V. ; Ho, M.Y.

  • Author_Institution
    Device Anal. Eng., Adv. Micro Devices (Singapore) Pte Ltd., Singapore, Singapore
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Conventional TEM sample preparation for full-stack BEOL construction analysis (CA) has several issues such as the difficulty of achieving full metal layers intact in a single lamella, and also a curtaining effect that adversely impacts TEM analysis. This paper presents and successfully demonstrates an alternative sample preparation technique for preparing CA samples with full-BEOL metal stack. The procedure involves changing the orientation of the lamella by rotating the sample during in situ FIB attachment and milling it sideways to achieve lamella thickness of 100 nm, with uniform thickness at the area of interest. With this new method, full metal layers can be preserved while minimizing the curtaining effect often observed in heterogeneous TEM sample preparation.
  • Keywords
    focused ion beam technology; semiconductor device manufacture; transmission electron microscopy; full metal layers; full-BEOL metal stack; full-stack BEOL construction analysis; improved construction analysis; in situ FIB attachment; lamella thickness; sideways FIB TEM sample preparation; single lamella; Coatings; Dielectrics; Ion beams; Manipulators; Metals; Milling; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306257
  • Filename
    6306257