Title :
42 GHz bandwidth InGaAlAs/InP electro absorption modulator with sub-volt modulation drive capability in a 50 nm spectral range
Author :
Le Pallec, M. ; Decobert, Jean ; Ramdane, A. ; El Dahdah, N. ; Blache, F. ; Provost, J.-G. ; Landreau, Jean ; Barthe, F. ; Lagay, Nadine
Author_Institution :
OPTO+, Alcatel CIT, Marcoussis, France
fDate :
31 May-4 June 2004
Abstract :
By enhancing excitonic absorption in a new design of a polarization independent EA modulator, a 50 nm flat absorption spectrum, 42 GHz bandwidth devices together with 14-30 dB/V modulation sensitivity are obtained for 75 μm long devices.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; excitons; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical design techniques; 42 GHz; 50 nm; 75 mum; InGaAlAs-InP; absorption spectrum; electroabsorption modulator; excitonic absorption; polarization; Absorption; Bandwidth; Bit rate; Bonding; Capacitance; Indium phosphide; Low voltage; Optical polarization; Quantum well devices; Semiconductor device packaging;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442791
