DocumentCode
3372778
Title
Effect of microwave electromagnetic interference on CMOS RS latches
Author
Chen, Jie
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2011
fDate
1-3 Nov. 2011
Firstpage
359
Lastpage
362
Abstract
Microwave electromagnetic interference is a big challenge to electronic systems nowadays. Latch is a fundamental building block of digital electronic systems used in computers, communications, and many other types of systems. In this paper, we use numerical method to study the effect of microwave electromagnetic interference on CMOS RS latches, from the amplitude of microwave electromagnetic interference. Simulation results show that microwave electromagnetic interference might change the output state of CMOS RS latches with increasing amplitude. Meanwhile, these two kinds of latches used in the simulation have different susceptibility to microwave electromagnetic interference due to different structure.
Keywords
CMOS integrated circuits; flip-flops; interference; magnetic susceptibility; microwave circuits; CMOS RS latches; digital electronic systems; fundamental building block; microwave electromagnetic interference; numerical method; susceptibility; CMOS integrated circuits; Electromagnetic interference; Latches; MOS devices; Microwave circuits; Microwave devices; CMOS RS latches; amplitude; microwave electromagnetic interference; susceptibility;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4244-8265-8
Type
conf
DOI
10.1109/MAPE.2011.6156270
Filename
6156270
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