• DocumentCode
    3372778
  • Title

    Effect of microwave electromagnetic interference on CMOS RS latches

  • Author

    Chen, Jie

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2011
  • fDate
    1-3 Nov. 2011
  • Firstpage
    359
  • Lastpage
    362
  • Abstract
    Microwave electromagnetic interference is a big challenge to electronic systems nowadays. Latch is a fundamental building block of digital electronic systems used in computers, communications, and many other types of systems. In this paper, we use numerical method to study the effect of microwave electromagnetic interference on CMOS RS latches, from the amplitude of microwave electromagnetic interference. Simulation results show that microwave electromagnetic interference might change the output state of CMOS RS latches with increasing amplitude. Meanwhile, these two kinds of latches used in the simulation have different susceptibility to microwave electromagnetic interference due to different structure.
  • Keywords
    CMOS integrated circuits; flip-flops; interference; magnetic susceptibility; microwave circuits; CMOS RS latches; digital electronic systems; fundamental building block; microwave electromagnetic interference; numerical method; susceptibility; CMOS integrated circuits; Electromagnetic interference; Latches; MOS devices; Microwave circuits; Microwave devices; CMOS RS latches; amplitude; microwave electromagnetic interference; susceptibility;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), 2011 IEEE 4th International Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-8265-8
  • Type

    conf

  • DOI
    10.1109/MAPE.2011.6156270
  • Filename
    6156270