DocumentCode :
3372786
Title :
Large diameter Sn-doped indium phosphide single crystal growth by LEC method
Author :
Sun, Niefeng ; Mao, Luhong ; Zhou, Xuolung ; Wu, Xiawun ; Guo, Weilian ; Hu, Ming ; Lingxia Li ; Mi Xiao ; Bin Liao ; Yang, Guangyao ; Jiande Fu ; Yao, Zhihong ; Zhao, Yanjun ; Yang, Kewu ; Sun, Tongniun
Author_Institution :
Hebei Semicond. Res. Inst., China
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
595
Lastpage :
598
Abstract :
Sn-doped InP is being used as a platform for a wide variety of fiber communications components, including lasers, LEDs, semiconductor optical amplifiers, modulators and photo-detectors. The more the diameter is, the more imperfection of the InP crystal would be. The substrates with large diameter are desired in order to realize low devices cost. In recent years, we have developed a high quality 3-inch and 4-inch Sn-doped InP single crystal growth using the HP-LEC method after P-injection direct synthesis polycrystalline. It is found that by carefully adjusting the thermal symmetry of the heating field and by further improving the quality of the polycrystalline, three inch and four inch twin-free Sn-doped InP crystals can be obtained even with a shoulder angle of up to 35°-90°, and defects caused by thermal decomposition appear on the surface of the crystals during pulling. For <111> LEC InP crystals, twin formation can be effectively suppressed by optimization of growth conditions, such as thermal field, doping concentration, etc. However, it is difficult to grow twin-free <100> LEC InP in a similar way. It is observed that the yield of single crystal <100> InP can be increased by controlling the ingot shape of a gradually increased diameter.
Keywords :
III-V semiconductors; crystal growth from melt; dislocations; indium compounds; pyrolysis; semiconductor doping; semiconductor growth; tin; 3 inch; 4 inch; HP-LEC method; InP:Sn; LED; P-injection direct synthesis polycrystalline; fiber communications components; indium phosphide single crystal growth; ingot; lasers; modulators; photo-detectors; semiconductor optical amplifiers; thermal decomposition; twin formation; Crystals; Fiber lasers; Indium phosphide; Light emitting diodes; Optical fiber communication; Optical fiber devices; Semiconductor lasers; Semiconductor optical amplifiers; Shape control; Thermal decomposition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442795
Filename :
1442795
Link To Document :
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