Associative matrix for nano-scale integrated circuits

Moving towards minimum feature sizes of nanometric scale, a new computational architecture for future nano-scale integration is presented. Due to the fact that resonant tunneling diodes are very promising devices, they are applied to a novel associative matrix architecture. Fault and error tolerance as well as high computational power (word-parallel realization) are inherently related features of such structures that display their full performance in the application presented here. By means of devices with increased functionality, relative complex circuit functions are performed at high speed with reduced component counts