A practical TEM sample preparation method for dopant profile delineation in vertical nanowire tunneling FETs

Author

Tang, L.J. ; Zhang, Y.J. ; Trigg, Alastair ; Li, X.

Author_Institution

Inst. of Microelectron., A*STAR, Singapore, Singapore

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, we introduce a sample preparation technique for two-dimensional (2D) dopant concentration profiling in silicon based devices. Selective chemical etching will be shown in a series of tunneling field-effect transistors (FETs). It is experimentally proven that this method offers a high success rate and provides a simple route to Transmission Electron Microscopy (TEM) study of 2D dopant profiles. This method is foreseen to be of great value for dopant-related failure analysis (FA) in silicon based logic and memory devices.

Keywords

doping profiles; field effect transistors; nanowires; transmission electron microscopy; tunnelling; 2D dopant concentration profiling; TEM sample preparation method; dopant profile delineation; dopant-related failure analysis; field-effect transistors; memory devices; selective chemical etching; silicon based devices; silicon based logic; transmission electron microscopy; vertical nanowire tunneling FET; Chemicals; Doping profiles; Etching; FETs; Junctions; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306271

Filename

6306271