Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealing

Author

Liu, Yuwei ; Wang, Hong ; Xiong, Yongzhong

Author_Institution

Microelectron. Centre, Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2004

fDate

31 May-4 June 2004

Firstpage

606

Lastpage

608

Abstract

The optical and electrical stabilities of MHEMT with an InGaAs/InP composite channel subjected RTA in the temperature range of 350 to 650 °C were studied. Although a metamorphic strain-relief buffer is included in MHEMT structure, no evidence of enhanced detriment of PL and electrical properties after RTA was observed. In fact, for the given structures, less degradations in the MHEMT were observed as compared to the referenced LHEMTs, which may partially ease the concerns on the thermal stability of the MHEMT structures.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; photoluminescence; rapid thermal annealing; thermal stability; 350 to 650 degC; InGaAs-InP; composite channel metamorphic HEMT structures; metamorphic strain-relief buffer; photoluminescence; rapid thermal annealing; thermal stability; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Photoluminescence; Rapid thermal annealing; Rapid thermal processing; Temperature distribution; Thermal stability; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442798

Filename

1442798