Title :
Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealing
Author :
Liu, Yuwei ; Wang, Hong ; Xiong, Yongzhong
Author_Institution :
Microelectron. Centre, Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
31 May-4 June 2004
Abstract :
The optical and electrical stabilities of MHEMT with an InGaAs/InP composite channel subjected RTA in the temperature range of 350 to 650 °C were studied. Although a metamorphic strain-relief buffer is included in MHEMT structure, no evidence of enhanced detriment of PL and electrical properties after RTA was observed. In fact, for the given structures, less degradations in the MHEMT were observed as compared to the referenced LHEMTs, which may partially ease the concerns on the thermal stability of the MHEMT structures.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; photoluminescence; rapid thermal annealing; thermal stability; 350 to 650 degC; InGaAs-InP; composite channel metamorphic HEMT structures; metamorphic strain-relief buffer; photoluminescence; rapid thermal annealing; thermal stability; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Photoluminescence; Rapid thermal annealing; Rapid thermal processing; Temperature distribution; Thermal stability; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442798
