DocumentCode
3372966
Title
Built-in self-diagnosis and test time reduction techniques for NAND flash memories
Author
Chou, Che-Wei ; Hou, Chih-Sheng ; Li, Jin-Fu
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear
2011
fDate
25-28 April 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents a low-cost built-in self-diagnosis (BISD) scheme for NAND flash memories, which can support the March-like test algorithms with page-oriented data backgrounds. Two simple test time reduction techniques are also proposed to reduce the test time. Experimental results show that the proposed BISD circuit for a 2M-bit flash memory only needs 1.7K gates. Also, the proposed test time reduction techniques can effectively reduce the test time. Analysis results show that they can reduce the test time to 48.628% of the normal test scheme for a 4G-bit flash memory tested by the March-FT test algorithm with solid data backgrounds.
Keywords
NAND circuits; built-in self test; flash memories; logic testing; BISD circuit; March-FT test algorithm; March-like test algorithms; NAND flash memories; built-in self-diagnosis; test time reduction techniques; Arrays; Ash; Circuit faults; Flash memory; Logic gates; Random access memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
Pending
Print_ISBN
978-1-4244-8500-0
Type
conf
DOI
10.1109/VDAT.2011.5783625
Filename
5783625
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