• DocumentCode
    3372984
  • Title

    A 3kV/1.5A/2kHz Compact Modulator for Nitrogen Ion Plasma Implantation

  • Author

    Rossi, J.O. ; Ueda, M. ; Barroso, J.J.

  • Author_Institution
    Space Res. Nat. Inst., Sao Jose dos Campos
  • fYear
    2005
  • fDate
    13-17 June 2005
  • Firstpage
    1041
  • Lastpage
    1044
  • Abstract
    To treat stainless steel surfaces by nitrogen plasma implantation we devised a solid-state compact modulator, in which a 8.0 muF capacitor discharges through a forward converter composed of a low blocking voltage IGBT switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as in conventional plasma ion implantation pulsers, which are expensive and cumbersome. For this, by using a high- voltage resistive load of 2 kOmega and a low power DC charger of only 300 V/0.2 A we built a prototype to provide pulses of 3 kV/5 mus with rise time of about 1.0 mus at a repetition rate of 2 kHz.
  • Keywords
    capacitors; convertors; modulators; plasma immersion ion implantation; power semiconductor switches; pulse transformers; IGBT switch; capacitor; current 1.5 A; forward converter; frequency 2 kHz; nitrogen ion plasma implantation; solid-state compact modulator; step-up pulse transformers; time 1.0 mus; voltage 1.0 kV; voltage 3 kV; Nitrogen; Plasma devices; Plasma immersion ion implantation; Pulse modulation; Pulse transformers; Solid state circuits; Steel; Surface discharges; Surface treatment; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 2005 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-9189-6
  • Electronic_ISBN
    0-7803-9190-x
  • Type

    conf

  • DOI
    10.1109/PPC.2005.300480
  • Filename
    4084399