Title :
Scaling issues in lateral power MOSFETs
Author :
Darwish, Mohamed ; Huang, John ; Liu, Minxuan ; Shekar, M.S. ; Williams, Richard ; Cornell, Mike
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
The interconnect limitations and scaling issues for large area lateral multi-cell power MOS transistors as they approach the ULSI realm are investigated. The increased importance of scaling the metal pitch and the number of layers for different MOS technologies is discussed. Furthermore, the voltage drop and current distribution along metal runners for different examples of layout options are examined in order to gain insight into scaling and layout considerations. It is shown that the temperature behaviour of devices with different metal lengths can be used to extract the contribution of the metal interconnects from measured data
Keywords :
MOS integrated circuits; ULSI; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; power MOSFET; power integrated circuits; thermal analysis; IC layout; MOS technologies; ULSI; current distribution; device temperature behaviour; interconnect limitations; large area lateral multi-cell power MOS transistors; lateral power MOSFET scaling; lateral power MOSFETs; metal interconnects; metal layer number scaling; metal length; metal pitch scaling; metal runners; voltage drop; Chemical analysis; Current distribution; Fingers; Integrated circuit interconnections; MOS devices; MOSFETs; Plugs; Power dissipation; Ultra large scale integration; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702701
