Harmonic mode operation of GaAs-IMPATT devices above 200 GHz

Author

Claassen, M. ; Böhm, H.

Author_Institution

Tech. Univ. Munchen, Germany

Volume

1

fYear

1998

fDate

1998

Firstpage

142

Abstract

In this work, theoretical and experimental investigations concerning power generation by second harmonic operation of self-pumped IMPATT diodes are described. The active device is characterised by a time-domain drift-diffusion model driven at fundamental and superimposed second harmonic frequency. The applied disc-type resonator structure is investigated by a commercial simulation program. Using a low parasitic encapsulation method and power combining of three active devices, 1 mW CW output power at 210 GHz was obtained, a value which was not achievable in fundamental mode operation so far

Keywords

III-V semiconductors; IMPATT diodes; encapsulation; equivalent circuits; gallium arsenide; harmonic generation; millimetre wave diodes; millimetre wave generation; power combiners; resonators; semiconductor device models; semiconductor device packaging; 1 mW; 210 GHz; EHF; GaAs; GaAs IMPATT devices; MM-wave diodes; device simulation; disc-type resonator structure; harmonic mode operation; low parasitic encapsulation method; power combining; power generation; second harmonic operation; self-pumped IMPATT diodes; three active device configuration; time-domain drift-diffusion model; Diodes; Frequency; Gallium arsenide; Impact ionization; Impedance; Microwave devices; Power generation; Power system harmonics; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium

Conference_Location

Kharkov

Print_ISBN

0-7803-5553-9

Type

conf

DOI

10.1109/MSMW.1998.758929

Filename

758929