Title :
Reliability analysis of CrSi Thin Film Resistors
Author :
Khor, C.W. ; Leung, Calvin ; Le Neel, Olivier
Author_Institution :
STMicroelectron. Pte Ltd., Singapore, Singapore
Abstract :
CrSi Thin Film Resistor (TFR) is mainly used due to its high precision of less than 1% standard deviation and low thermal coefficient of resistance (TCR) with zero drift with temperature. Reliability characterization is studied on CrSi Thin Film Resistors (TFRs) to understand the reliability behaviour of CrSi Thin Film Resistors. Current sweep is performed on TFRs structures to determine current density threshold before catastrophic resistance degradation. Constant Current stress is performed at several currents to characterize the resistance change of TFRs with current. 2 models are proposed for lifetime stability prediction of TFRs.
Keywords :
chromium compounds; circuit stability; current density; electric resistance; integrated circuit reliability; statistical analysis; temperature; thin film resistors; CrSi; TCR; TFR structure; catastrophic resistance degradation; constant current stress; current density threshold; current sweep; lifetime stability prediction; reliability analysis; reliability behaviour; reliability characterization; resistance change; standard deviation; temperature; thermal coefficient of resistance; thin film resistor; zero drift; Current density; Extrapolation; Mathematical model; Reliability; Resistance; Resistors; Stress; CrSi Thin Film Resistors (TFR); current density threshold; lifetime prediction; reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306282
