Reliability analysis of CrSi Thin Film Resistors

Author

Khor, C.W. ; Leung, Calvin ; Le Neel, Olivier

Author_Institution

STMicroelectron. Pte Ltd., Singapore, Singapore

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

4

Abstract

CrSi Thin Film Resistor (TFR) is mainly used due to its high precision of less than 1% standard deviation and low thermal coefficient of resistance (TCR) with zero drift with temperature. Reliability characterization is studied on CrSi Thin Film Resistors (TFRs) to understand the reliability behaviour of CrSi Thin Film Resistors. Current sweep is performed on TFRs structures to determine current density threshold before catastrophic resistance degradation. Constant Current stress is performed at several currents to characterize the resistance change of TFRs with current. 2 models are proposed for lifetime stability prediction of TFRs.

Keywords

chromium compounds; circuit stability; current density; electric resistance; integrated circuit reliability; statistical analysis; temperature; thin film resistors; CrSi; TCR; TFR structure; catastrophic resistance degradation; constant current stress; current density threshold; current sweep; lifetime stability prediction; reliability analysis; reliability behaviour; reliability characterization; resistance change; standard deviation; temperature; thermal coefficient of resistance; thin film resistor; zero drift; Current density; Extrapolation; Mathematical model; Reliability; Resistance; Resistors; Stress; CrSi Thin Film Resistors (TFR); current density threshold; lifetime prediction; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306282

Filename

6306282