Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPE

Author

Noborisaka, J. ; Motohisa, J. ; Takeda, J. ; Inari, M. ; Miyoshi, Y. ; Ooike, N. ; Fukui, T.

Author_Institution

Res. Center for Integrated Quantum. Electron., Hokkaido Univ., Sapporo, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

647

Lastpage

650

Abstract

We report on the fabrication of GaAs and InGaAs hexagonal nanowires surrounded by {110} vertical facets on GaAs (111)B and InP (111)B substrates using selective area (SA) MOVPE growth. The substrate for SA-growth was partially covered with thin SiO₂ and circular mask opening with diameter d⁰ of 50∼200 nm was defined. After SA-MOVPE, GaAs or InGaAs nanowires with the typical diameter d ranging from 50 nm to 200 nm and height 2 μm to 9 μm was formed vertically on the substrates, depending on the growth conditions and the pattern geometry. Possible growth mechanism is also discussed.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanowires; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 2 to 9 mum; 50 to 200 nm; GaAs; InGaAs; InP; SiO₂; circular mask; nanowires fabrication; pattern geometry; selective area MOVPE; vertical facets; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lithography; Nanowires; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442808

Filename

1442808