Title :
A 2.28 mW 80.8 GHz CMOS divide-by-4 DILFD with 18.24% locking range using tunable LC source-degeneration
Author :
Chen, Chang- Zhi ; Wang, Chien-Chin ; Lin, Yo-Sheng ; Huang, Guo-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
Abstract :
A 80.8-GHz CMOS divide-by-4 direct injection-locked frequency divider (DILFD4) using tunable LC source-degeneration (TLCSD) for operation frequency and locking-range enhancement is demonstrated. The TLCSD is made by adding two tunable LC tanks, where varactors are used as the required capacitors, to the source terminals of the cross-coupled transistor pair of the DILFD4. Compared with the traditional cross-coupled transistor pair, the proposed one significantly decreases the equivalent parallel capacitance (Ceq). This in turn results in the increase of both the operation frequency and locking-range of the DILFD4. The DILFD4 dissipated 2.28 mW from a 1.2 V power supply, and achieved a total locking range of 18.24% (i.e. 13.5 GHz, from 67.28 GHz to 80.78 GHz). Furthermore, the DILFD4 achieved excellent output phase-noise of -137.14. dBc/Hz at 1 MHz offset when the input signal was locked at 68.116 GHz. The chip area was only 1.025×0.765 mm excluding the test pads.
Keywords :
CMOS integrated circuits; frequency dividers; varactors; CMOS divide-by-4 direct injection-locked frequency divider; capacitor; cross-coupled transistor pair; equivalent parallel capacitance; frequency 1 MHz; frequency 67.28 GHz to 80.78 GHz; frequency 68.116 GHz; frequency 80.8 GHz; locking-range enhancement; operation frequency; power 2.28 mW; tunable LC source-degeneration; tunable LC tanks; varactor; voltage 1.2 V; CMOS integrated circuits; Capacitance; Frequency conversion; Frequency measurement; Phase noise; Transistors; Voltage-controlled oscillators; CMOS; LC source-degeneration; direct injection-locked frequency divider; locking range;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8500-0
DOI :
10.1109/VDAT.2011.5783636