Title :
Over 500 GHz InP heterojunction bipolar transistors
Author :
Feng, Milton ; Hafez, Walid ; Lai, Jie-Wei
Author_Institution :
Dept. of. Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
31 May-4 June 2004
Abstract :
Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520 GHz operating at current densities over 1400 kA/cm2 have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.
Keywords :
III-V semiconductors; current density; electric breakdown; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; InP; SHBT; breakdown voltage; current densities; heterojunction bipolar transistors; thermal properties; Bandwidth; Bipolar transistors; Current density; Cutoff frequency; DH-HEMTs; Electrons; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Scalability;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442811
