• DocumentCode
    3373187
  • Title

    Over 500 GHz InP heterojunction bipolar transistors

  • Author

    Feng, Milton ; Hafez, Walid ; Lai, Jie-Wei

  • Author_Institution
    Dept. of. Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    653
  • Lastpage
    658
  • Abstract
    Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520 GHz operating at current densities over 1400 kA/cm2 have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.
  • Keywords
    III-V semiconductors; current density; electric breakdown; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; InP; SHBT; breakdown voltage; current densities; heterojunction bipolar transistors; thermal properties; Bandwidth; Bipolar transistors; Current density; Cutoff frequency; DH-HEMTs; Electrons; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Scalability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442811
  • Filename
    1442811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3373187