Title :
A receiver in SiGe BiCMOS technology for wireless low frequency time signal broadcast system
Author :
Yeh, Ho-Hsin ; Huang, Ji-Chen ; Kuo, Yu-Chen ; Hsu, Klaus Y -J
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Low frequency (LF) broadcast system is not only an essential platform for the operation of radio watches but also a potential system for various applications such as disaster warning. The front-end IC in the LF receivers is a key component. A low-power, low-noise receiver front-end IC realized in SiGe BiCMOS technology for low frequency (77.5 kHz) time signal broadcast system is presented in this work. The receiver exhibits wide input dynamic range and high sensitivity. For the use at LF, flicker noise usually dominates the system noise floor. The receiver designed in this work uses SiGe HBT to reduce flicker noise. The receiver also incorporates a variable gain amplifier (VGA) with wide gain range from -44 dB to 62 dB. Under 3.3 V power supply, the receiver only consumes 0.343 mW when working. Stand-by mode has been implemented to save even more energy. The chip occupies an area of 1300 μm × 908 μm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; flicker noise; heterojunction bipolar transistors; radio receivers; radiofrequency amplifiers; radiofrequency integrated circuits; semiconductor materials; BiCMOS technology; HBT; LF receivers; SiGe; flicker noise; frequency 77.5 kHz; front-end IC; gain -44 dB to 62 dB; power 0.343 mW; variable gain amplifier; voltage 3.3 V; wireless low frequency time signal broadcast system; Capacitors; Demodulation; Gain; Gain control; Integrated circuits; Receivers; Voltage control;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8500-0
DOI :
10.1109/VDAT.2011.5783637
