Title :
Reliability study of 850 nm VCSELs for data communications
Author :
Hawthorne, Robert A., III ; Guenter, James K. ; Granville, David N. ; Hibbs-Brenner, Mary K. ; Morgan, Robert A.
Author_Institution :
Micro Switch Div., Honeywell Inc., Richardson, TX, USA
fDate :
April 30 1996-May 2 1996
Abstract :
We present reliability results for 850 nm Vertical Cavity Surface Emitting Laser (VCSEL) devices. Hundreds of parts from multiple wafer lots and package styles were subjected to burn-in for thousands of hours at various temperatures and currents, yielding more than one million device-hours of data. Possible failure mechanisms are also discussed.
Keywords :
failure analysis; laser reliability; optical communication equipment; semiconductor device packaging; semiconductor lasers; surface emitting lasers; 850 nm; VCSELs; burn-in; data communications; failure mechanisms; multiple wafer lots; package styles; reliability; vertical cavity surface emitting laser; Communication switching; Data communication; Packaging; Production; Stress; Surface emitting lasers; Switches; Telecommunication network reliability; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492120
