DocumentCode
3373200
Title
Reliability study of 850 nm VCSELs for data communications
Author
Hawthorne, Robert A., III ; Guenter, James K. ; Granville, David N. ; Hibbs-Brenner, Mary K. ; Morgan, Robert A.
Author_Institution
Micro Switch Div., Honeywell Inc., Richardson, TX, USA
fYear
1996
fDate
April 30 1996-May 2 1996
Firstpage
203
Lastpage
210
Abstract
We present reliability results for 850 nm Vertical Cavity Surface Emitting Laser (VCSEL) devices. Hundreds of parts from multiple wafer lots and package styles were subjected to burn-in for thousands of hours at various temperatures and currents, yielding more than one million device-hours of data. Possible failure mechanisms are also discussed.
Keywords
failure analysis; laser reliability; optical communication equipment; semiconductor device packaging; semiconductor lasers; surface emitting lasers; 850 nm; VCSELs; burn-in; data communications; failure mechanisms; multiple wafer lots; package styles; reliability; vertical cavity surface emitting laser; Communication switching; Data communication; Packaging; Production; Stress; Surface emitting lasers; Switches; Telecommunication network reliability; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location
Dallas, TX, USA
Print_ISBN
0-7803-2753-5
Type
conf
DOI
10.1109/RELPHY.1996.492120
Filename
492120
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