DocumentCode :
3373201
Title :
TID characterization of 0.13µm SONOS cell in 4Mb NOR flash memory
Author :
Qiao, Fengying ; Yu, Xiao ; Pan, Liyang ; Ma, Haozhi ; Wu, Dong ; Xu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we investigate the TID response of 0.13μm SONOS cell with different charge states up to 2 Mrad(Si) and propose an improved model. Additionally, radiation experiment results show that IRD increase is the main reason for read error in the fabricated 4Mb flash memory chip.
Keywords :
NOR circuits; flash memories; radiation hardening (electronics); IRD; NOR flash memory; SONOS cell; TID characterization; memory size 4 MByte; radiation experiment; size 0.13 micron; Degradation; Electron traps; Equations; Flash memory; Mathematical model; SONOS devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306287
Filename :
6306287
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3373201
بازگشت