DocumentCode
3373282
Title
1.3 to 1.6 micron quantum dot devices
Author
Zhang, L. ; Gray, A.L. ; Wang, R. ; Luong, S. ; Cheng, L. ; Sun, K. ; Bryan, C. ; Nabulsi, F. ; Whittington, T. ; Zou, Z. ; Olona, L. ; Wiggins, C. ; Tumolillo, T. ; Zilko, J. ; Varangis, P.M. ; Lester, L.F. ; Su, H. ; Stintz, A. ; Malloy, K.J.
Author_Institution
Zia Laser Inc., Albuquerque, NM, USA
fYear
2004
fDate
31 May-4 June 2004
Firstpage
675
Lastpage
678
Abstract
The performance and applications of 1.3 to 1.6 micron quantum dot optoelectronic devices will be presented, including semiconductor lasers for data communications, mode-locked lasers, and semiconductor optical amplifiers suitable for high power, high speed operation.
Keywords
data communication equipment; high-speed optical techniques; laser mode locking; optical communication equipment; quantum dot lasers; semiconductor optical amplifiers; 1.3 to 1.6 micron; data communications; high-power operation; high-speed operation; mode-locked lasers; quantum dot optoelectronic devices; semiconductor lasers; semiconductor optical amplifiers; Distributed feedback devices; Laser feedback; Laser mode locking; Quantum dot lasers; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Temperature; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442816
Filename
1442816
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