Title :
Analysis of Al-shorted WSix/Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation
Author :
Kataoka, M. ; Komuro, K. ; Fujita, K. ; Hayama, M. ; Taniguchi, A.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Al-shorted WSix/Si gate performance in high-frequency band Si power MOSFETs is analyzed with process/device/circuit continuous simulation. We confirm that the Al-shorted WSix/Si (400 nm height) gate can perform well even for large-signal operation at high frequencies
Keywords :
UHF field effect transistors; aluminium; circuit analysis computing; microwave power transistors; power MOSFET; semiconductor device metallisation; semiconductor device models; semiconductor device testing; semiconductor process modelling; tungsten compounds; 400 nm; Al-WSi-Si; Al-shorted WSix/Si gate; Al-shorted WSix/Si gate performance; high-frequency band Si power MOSFETs; large-signal operation; power MOSFETs; process/device/circuit continuous simulation; Analytical models; Circuit simulation; Frequency; Linear systems; MOSFETs; Performance analysis; Power amplifiers; Power system relaying; Power system simulation; Power system stability;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702703
