Title :
Long-wavelength VCSELs
Author :
Maute, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
fDate :
31 May-4 June 2004
Abstract :
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) based on the AlGalnAs/InP material system are demonstrated in the wavelength range from 1.3 to 2.0 μm. Single mode emission with an output power of up to 1.7 mW at room temperature was observed in continuous-wave mode. Furthermore, high-speed modulation up to 10 Gbit/s was realized and micro-mechanically tunable VCSELs based on a two-chip concept were investigated showing a tuning range of 30 nm under single mode condition.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; laser modes; laser tuning; micro-optics; optical modulation; semiconductor lasers; surface emitting lasers; 1.3 to 2.0 mum; 1.7 mW; 10 Gbit/s; AlGaInAs-InP; buried tunnel junction vertical-cavity surface-emitting lasers; continuous-wave mode; high-speed modulation; micromechanically tunable VCSEL; single mode emission; two-chip concept; Indium phosphide; Laser modes; Laser tuning; Optical materials; Power generation; Surface emitting lasers; Surface waves; Temperature; Tunable circuits and devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442821
