DocumentCode
337344
Title
Negative dynamic conductivity in diode structure with the cone cathode
Author
Chayka, V.E. ; Goncharuk, N.M. ; Mironov, D.V.
Author_Institution
Res. Inst. Orion, Acad. of Sci., Kiev, Ukraine
Volume
1
fYear
1998
fDate
1998
Firstpage
275
Abstract
The possibility of using diode structures with a cone cathode for negative dynamic conductivity generation and consequently high frequency oscillation generation in a shortwave part of the millimeter range and in the submillimeter range is investigated. The principle of such diode operation is similar to that of the solid-state injection-transit diode, where to generate oscillations or to obtain negative conductivity it is necessary that the electron transit time between the cathode and the anode is approximately 0.75 oscillation periods
Keywords
millimetre wave diodes; resonant tunnelling diodes; submillimetre wave diodes; Si-SiO2; cone cathode; diode structures; electron transit time; high frequency oscillation; negative dynamic conductivity; resonant tunnelling; Anodes; Cathodes; Conductivity; Electrons; Frequency; Poisson equations; Resonance; Semiconductor diodes; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location
Kharkov
Print_ISBN
0-7803-5553-9
Type
conf
DOI
10.1109/MSMW.1998.758979
Filename
758979
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