DocumentCode :
337344
Title :
Negative dynamic conductivity in diode structure with the cone cathode
Author :
Chayka, V.E. ; Goncharuk, N.M. ; Mironov, D.V.
Author_Institution :
Res. Inst. Orion, Acad. of Sci., Kiev, Ukraine
Volume :
1
fYear :
1998
fDate :
1998
Firstpage :
275
Abstract :
The possibility of using diode structures with a cone cathode for negative dynamic conductivity generation and consequently high frequency oscillation generation in a shortwave part of the millimeter range and in the submillimeter range is investigated. The principle of such diode operation is similar to that of the solid-state injection-transit diode, where to generate oscillations or to obtain negative conductivity it is necessary that the electron transit time between the cathode and the anode is approximately 0.75 oscillation periods
Keywords :
millimetre wave diodes; resonant tunnelling diodes; submillimetre wave diodes; Si-SiO2; cone cathode; diode structures; electron transit time; high frequency oscillation; negative dynamic conductivity; resonant tunnelling; Anodes; Cathodes; Conductivity; Electrons; Frequency; Poisson equations; Resonance; Semiconductor diodes; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location :
Kharkov
Print_ISBN :
0-7803-5553-9
Type :
conf
DOI :
10.1109/MSMW.1998.758979
Filename :
758979
Link To Document :
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