Title :
High output power 1540-nm vertical-cavity semiconductor optical amplifiers
Author :
Kimura, Toshio ; Bjorlin, Staffan ; Chen, Qi ; Wang, Chad ; Bowers, John E.
Author_Institution :
Dept. Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
31 May-4 June 2004
Abstract :
Vertical-cavity semiconductor optical amplifiers operating at 1540 nm are presented. The use of optically pumped AlInGaAs MQW regions resulted in record-high saturation output power of +0.5 dBm and 17.6 dB of fiber-to-fiber gain.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical fibre amplifiers; optical pumping; optical saturation; quantum well lasers; semiconductor optical amplifiers; 1540 nm; 17.6 dB; AlInGaAs; MQW; fiber-to-fiber gain; multiple quantum well; optical pumping; saturation output power; vertical-cavity semiconductor optical amplifiers; Distributed Bragg reflectors; Laser excitation; Optical coupling; Optical design; Optical fiber devices; Optical pumping; Optical refraction; Power amplifiers; Power generation; Semiconductor optical amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442823
