• DocumentCode
    3373477
  • Title

    InP HBT IC manufacturing

  • Author

    Nguyen, N.X. ; Fierro, J. ; Feng, K.T. ; Nguyen, C.

  • Author_Institution
    Global Commun. Semicond., Inc., Torrance, CA, USA
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    712
  • Lastpage
    716
  • Abstract
    An InP HBT IC process technology has been developed to manufacture high performance electronics for commercial and military applications. Mainstream semiconductor production practices, statistical process control (SPC) and process failure mode effects and analysis (PFMEA) have been implemented to sustain run-to-run consistency and uniformity of the processed wafers. Process reliability qualification of fabricated devices has yielded a projected mean-time-to-failure (MTTF) of 5e6 hours at the operating condition of Tj=125 °C and Jc=100 kA/cm2. Comprehensive design kits consisting of VBIC device models, design layout rules, and standard library cells are provided to maximize first-pass success and enable ease of design with this new device technology. Published state-of-the-art circuits performance using this process technology clearly demonstrate its viability for mainstream applications.
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit manufacture; semiconductor device reliability; semiconductor device testing; 125 degC; HBT IC manufacturing; HBT IC process technology; InP; VBIC device models; design layout rules; mean-time-to-failure; process failure mode effects; process reliability qualification; standard library cells; statistical process control; Application specific integrated circuits; Failure analysis; Heterojunction bipolar transistors; Indium phosphide; Libraries; Manufacturing processes; Process control; Production; Qualifications; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442825
  • Filename
    1442825