DocumentCode
337349
Title
Quantizing of transition radiation of the surface polaritons by the charge, intersecting two-layer two-dimensional electron system, placed into strong magnetic field
Author
Averkov, Yu O. ; Beletskii, N.N. ; Yakovenko, V.M.
Author_Institution
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Volume
1
fYear
1998
fDate
1998
Firstpage
289
Abstract
The transition radiation of surface polaritons, which appears when the charge is moving through a homogeneous isotropic medium with dielectric constant ε, into which a two-layer 2D electron system (2DES), placed in a transverse quantizing magnetic field, is implanted, is theoretically investigated. The two layer 2DES consists of two GaAs infinitely deep quantum wells separated by an AlGaAs potential barrier of finite width and height. The quantizing magnetic field and the direction of the charge movement are perpendicular to the 2DES. The energy spectrum of the electrons in such a system is fully discrete, and this leads to stepwise dependencies of Landau level filling factor and Hall conductivity of the two-layer 2DES on on the magnetic field
Keywords
III-V semiconductors; Landau levels; aluminium compounds; gallium arsenide; polaritons; quantum Hall effect; semiconductor quantum wells; transition radiation; two-dimensional electron gas; AlGaAs potential barrier; GaAs-AlGaAs; Hall conductivity; Landau level filling factor; deep quantum wells; homogeneous isotropic medium; strong magnetic field; surface polaritons; transition radiation; transverse quantizing magnetic field; two-layer 2D electron system; Conductivity; Cyclotrons; Dielectric constant; Electrons; Equations; Filling; Frequency; Gallium arsenide; Magnetic fields; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location
Kharkov
Print_ISBN
0-7803-5553-9
Type
conf
DOI
10.1109/MSMW.1998.758984
Filename
758984
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