Non-radiative polaritons in GaAs/AlGaAs heterostructures under quantum Hall effect conditions

We investigate the nonradiative polaritons in real GaAs/Al_x Ga_1-xAs heterojunctions under integer quantum Hall effect conditions. The influence of Al_xGa_1-xAs layer thickness and the degree of energy dissipation in 2DES over the existence conditions, the spectrum and damping of nonradiative polaritons are investigated. It is shown that in addition to surface polaritons (SP), which are localized at the GaAs/Al_xGa_1-xAs boundary, another type of SP can exist in the heterojunction, localized at the Al_xGa_1-x As-vacuum/air boundary (Brewster´s modes). It is found that in addition to these two types of SP, bulk polaritons of various orders can propagate in the heterojunction, which possess one or several maximums of energy flow in the Al_xGa_1-xAs layer. It is pointed out that under IQHE conditions all the characteristics of surface and bulk polaritons are quantized. It is determined that if the wave number changes, surface and bulk polaritons can continuously transform one into another