Title :
Non-radiative polaritons in GaAs/AlGaAs heterostructures under quantum Hall effect conditions
Author :
Beletskii, N.N. ; Borisenko, S.A.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Abstract :
We investigate the nonradiative polaritons in real GaAs/Alx Ga1-xAs heterojunctions under integer quantum Hall effect conditions. The influence of AlxGa1-xAs layer thickness and the degree of energy dissipation in 2DES over the existence conditions, the spectrum and damping of nonradiative polaritons are investigated. It is shown that in addition to surface polaritons (SP), which are localized at the GaAs/AlxGa1-xAs boundary, another type of SP can exist in the heterojunction, localized at the AlxGa1-x As-vacuum/air boundary (Brewster´s modes). It is found that in addition to these two types of SP, bulk polaritons of various orders can propagate in the heterojunction, which possess one or several maximums of energy flow in the AlxGa1-xAs layer. It is pointed out that under IQHE conditions all the characteristics of surface and bulk polaritons are quantized. It is determined that if the wave number changes, surface and bulk polaritons can continuously transform one into another
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; polaritons; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; 2D electron system; Brewster´s modes; GaAs-AlGaAs; bulk polaritons; energy dissipation; heterostructures; integer quantum Hall effect; layer thickness; nonradiative polaritons; surface polaritons; Conductivity; Dielectric constant; Dielectric substrates; Electromagnetic fields; Electromagnetic propagation; Electrons; Gallium arsenide; Hall effect; Heterojunctions; Tensile stress;
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Conference_Location :
Kharkov
Print_ISBN :
0-7803-5553-9
DOI :
10.1109/MSMW.1998.758985
