Title :
Hydrogen Passivation of Boron Acceptors and Long-Term Breakdown Voltage Instability in N/sup +//P Su
Author :
Ciappa, Mauro ; Malberti, Paolo ; Birolini, Alessandro
fDate :
April 30 1996-May 2 1996
Keywords :
Boron; Failure analysis; Hydrogen; Mass spectroscopy; Passivation; Plasma temperature; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon;
Conference_Titel :
Reliability Physics Symposium, 1996. 34th Annual Proceedings., IEEE International
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-2753-5
DOI :
10.1109/RELPHY.1996.492138