Title :
Studies on Lattice vibration, impurity and defects in MIS structures using Hf-based dielectrics on Si and SiGe substrates
Author :
Mukherjee, C. ; Mallik, S. ; Hota, M.K. ; Das, T. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
Abstract :
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Keywords :
MIS structures; dielectric materials; lattice dynamics; tunnelling spectroscopy; vibrational states; Hf-based dielectrics; MIS structures; Si; Si substrates; SiGe; SiGe substrates; defects; impurity; inelastic tunneling spectroscopy; lattice dynamics; lattice vibration; molecular vibrations; phonons; strained-SiGe layers; trap-features; ultra-thin Hf-based gate dielectrics; Dielectrics; Logic gates; Phonons; Silicon; Substrates; Tunneling; Vibrations;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306303
