Title :
120 °C operation of 10 Gbps direct modulated 1.3 μm AlGaInAs-MQW DFB laser diodes
Author :
Shirai, S. ; Watatani, C. ; Takemi, M. ; Ota, T. ; Takagi, K. ; Aoyagi, T. ; Omura, E.
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
31 May-4 June 2004
Abstract :
1.3 μm AlGaInAs-MQW ridge waveguide DFB-LDs with a buried grating close to active layer in n-cladding layer was developed. The light output power over 5 mW and clear eye opening with no mask hits for OC-192 under 10 Gbps direct modulation have been realized from 25 °C to 120 °C. The stable operation over 1600 hours under the APC mode of 10 mW at 95 °C has been confirmed.
Keywords :
III-V semiconductors; ageing; aluminium compounds; claddings; diffraction gratings; distributed feedback lasers; gallium compounds; high-speed optical techniques; indium compounds; laser stability; laser transitions; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 10 Gbit/s; 10 mW; 25 to 120 degC; APC mode; AlGaInAs; MQW DFB laser diodes; buried grating; direct modulation; distributed feedback; multiple quantum well; n-cladding layer; ridge waveguide; Charge carrier processes; Coatings; Diode lasers; Gratings; Optical device fabrication; Photonic band gap; Power generation; Quantum well devices; Reflectivity; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442830
