Temperature and wavelength dependence of recombination processes in 1.5 μm InGaAlAs/InP-based lasers

Author

Sweeney, S.J. ; McConville, D. ; Jin, S.R. ; Ahmad, C.N. ; Masse, N.F. ; Bouyssou, R.-X. ; Adams, A.R. ; Hanke, C.

Author_Institution

Adv. Technol. Inst., Surrey Univ., Guildford, UK

fYear

2004

fDate

31 May-4 June 2004

Firstpage

738

Lastpage

741

Abstract

The improved thermal stability of 1.5 μm InGaAlAs-compared with InGaAs-based lasers is investigated using a combination of low temperature and high pressure techniques. The results indicate that this is due to lower non-radiative Auger recombination in the InGaAlAs devices because of the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; conduction bands; electron-hole recombination; gallium compounds; hole density; indium compounds; laser transitions; semiconductor lasers; thermal stability; thermo-optical effects; InGaAlAs-InP; conduction band offset; high pressure techniques; hole density; nonradiative Auger recombination; quantum wells; recombination processes; semiconductor lasers; thermal stability; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Optical materials; Pressure measurement; Pump lasers; Radiative recombination; Scanning probe microscopy; Spontaneous emission; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442831

Filename

1442831