DocumentCode
3373668
Title
ASE-injected wideband gain lasers covering C-band channels with temperature range from - 30 to 80°C in a 155 Mb/s WDM-PON
Author
Lee, J.K. ; Lee, E.H. ; Shin, D.J. ; Bang, Y.C. ; Kim, J.Y. ; Lee, J.H. ; Kim, H.S. ; Oh, Y.K. ; Kim, T.I.
Author_Institution
Telecommun. R&D Center, Samsung Electron. Co., Suwon, South Korea
fYear
2004
fDate
31 May-4 June 2004
Firstpage
746
Lastpage
749
Abstract
We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-hand wavelength channels with temperature range from -30 to 80 °C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks (WDM-PON).
Keywords
optical fibre networks; optical transmitters; passive networks; semiconductor lasers; superradiance; telecommunication channels; wavelength division multiplexing; -30 to 80 degC; 155 Mbit/s; 25 km; ASE-injected wideband gain lasers; C-band channels; WDM-PON; single mode fiber; spectrum-sliced amplified spontaneous emission; upstream transmissions; wavelength division multiplexed-passive optical networks; Aging; Artificial intelligence; Temperature distribution; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442833
Filename
1442833
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