Title :
ASE-injected wideband gain lasers covering C-band channels with temperature range from - 30 to 80°C in a 155 Mb/s WDM-PON
Author :
Lee, J.K. ; Lee, E.H. ; Shin, D.J. ; Bang, Y.C. ; Kim, J.Y. ; Lee, J.H. ; Kim, H.S. ; Oh, Y.K. ; Kim, T.I.
Author_Institution :
Telecommun. R&D Center, Samsung Electron. Co., Suwon, South Korea
fDate :
31 May-4 June 2004
Abstract :
We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-hand wavelength channels with temperature range from -30 to 80 °C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks (WDM-PON).
Keywords :
optical fibre networks; optical transmitters; passive networks; semiconductor lasers; superradiance; telecommunication channels; wavelength division multiplexing; -30 to 80 degC; 155 Mbit/s; 25 km; ASE-injected wideband gain lasers; C-band channels; WDM-PON; single mode fiber; spectrum-sliced amplified spontaneous emission; upstream transmissions; wavelength division multiplexed-passive optical networks; Aging; Artificial intelligence; Temperature distribution; Wideband;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442833
