• DocumentCode
    3373722
  • Title

    Characterization of CMOS Compatible RF MEMS Switch at Cryogenic Temperatures

  • Author

    Rantakari, P. ; Vähä-Heikkilä, T.

  • Author_Institution
    VTT Tech. Res. Centre of Finland, Espoo
  • fYear
    2007
  • fDate
    10-14 June 2007
  • Firstpage
    639
  • Lastpage
    642
  • Abstract
    In this paper, a CMOS compatible micromechanical RF switch is reported and its mechanical performance is studied on a wide temperature range from 295 K down to 20 K. A switch with a clamped- clamped structure showed plastic deformation during the cooling and finally failed during the warming cycle. On the contrary, a switch with a cantilever structure was functional throughout the test cycles.
  • Keywords
    CMOS integrated circuits; cryogenics; integrated circuit testing; microswitches; plastic deformation; radiofrequency integrated circuits; CMOS compatible RF MEMS switch; cantilever structure; clamped- clamped structure; cryogenic temperatures; plastic deformation; temperature 295 K to 20 K; Bridge circuits; Capacitance; Cooling; Cryogenics; Radio frequency; Radiofrequency microelectromechanical systems; Scattering parameters; Switches; Temperature; Voltage; Cryogenics; RF MEMS; RF Switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
  • Conference_Location
    Lyon
  • Print_ISBN
    1-4244-0842-3
  • Electronic_ISBN
    1-4244-0842-3
  • Type

    conf

  • DOI
    10.1109/SENSOR.2007.4300211
  • Filename
    4300211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3373722