First power demonstration of InP/GaAsSb/InP double HBTs

Author

Xin Zhu ; Pavlidis, Dimitris ; Guangyuan Zhao

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2004

fDate

31 May-4 June 2004

Firstpage

757

Lastpage

760

Abstract

The microwave power performance of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) was evaluated and is reported for the first time. Fabricated DHBTs showed DC gain of 15-35, small turn-on voltages of 0.44 V at 1 kA/cm² , almost zero offset voltage, and emitter-collector breakdown voltage BV_CEO ≥ 6 V. Devices with 3×5 μm² emitters showed maximum f_T of 75 GHz and maximum f_max of 34 GHz when biased at J_C =1.7×10⁵ A/cm² and V_CE =2.0 V. Devices with 5×10 μm² emitters demonstrated power gain of 10 dB with 1 dB-compressed output power of 18 dBm at 5 GHz. High power density of 1.6 mW/μm² and associated efficiency of 33% were obtained using these devices.

Keywords

III-V semiconductors; arsenic compounds; electric breakdown; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 0.44 V; 10 dB; 2.0 V; 33 percent; 34 GHz; 5 GHz; 75 GHz; DC gain; InP-GaAsSb-InP; double HBT; double heterojunction bipolar transistors; emitter-collector breakdown voltage; microwave power performance; power density; Breakdown voltage; Double heterojunction bipolar transistors; Etching; Fabrication; Frequency; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442836

Filename

1442836