DocumentCode :
3373749
Title :
Low-Cost Highly-Robust Hardened Cells Using Blocking Feedback Transistors
Author :
Nicolaidis, Michael ; Perez, Renaud ; Alexandrescu, Dan
Author_Institution :
TIMA Lab., Grenoble
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
371
Lastpage :
376
Abstract :
CMOS nanometric technologies are increasingly sensitive to soft errors, including SEUs affecting storage cells and SETs initiated in the combinational logic, and eventually captured by some latches or flip- flops. SEUs affecting latches or flip-flops are by far the largest soft error rate (SER) contributor in logic. Thus, developing cost-efficient hardened storage cells to cope with SEUs in latches and flip-flops (but also in some memories difficult to protect by ECC ) is of increasing importance. This paper proposes a new principle for designing low-cost highly robust storage cells and several transistor level implementations.
Keywords :
radiation hardening (electronics); semiconductor storage; blocking feedback transistors; hardened storage cells; highly-robust hardened cells; single event upsets; soft error rate; CMOS logic circuits; CMOS technology; Capacitance; Costs; Feedback; Flip-flops; Logic testing; Protection; Robustness; Single event transient; SEUs; radiation hardened cells; soft errors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Test Symposium, 2008. VTS 2008. 26th IEEE
Conference_Location :
San Diego, CA
ISSN :
1093-0167
Print_ISBN :
978-0-7695-3123-6
Type :
conf
DOI :
10.1109/VTS.2008.15
Filename :
4511753
Link To Document :
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