Physically based analysis of hot carrier induced degradation in InP/InGaAs double heterojunction bipolar transistors

The degradation mechanism of InP/InGaAs double HBT subjected to hot carrier stress is studied. By assuming hot carrier damages at junction surface, a physical based rate equation is used to describe the junction degradation, which provides a consistent prediction for our experimental data. The energy required for the generation of surface damages at base-collector and base-emitter junction surface are estimated to be 1.4 and 1.9 eV, respectively, which may suggest a hydrogen related surface degradation mechanism.