Title :
Front-end wideband amplifiers with 4 GHz bandwidth realized in NT25 low-power bipolar technology
Author :
Lee, W. ; Filanovsky, I.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A low-power RF wideband amplifier is presented. It has a 26 dB gain, noise figures of 6.6 dB, -3 dB bandwidth of 3.9 GHz, and consumes 63 mW power with a 3 V power supply. The circuit is implemented using Si bipolar process, NT25, which has fT of 25 GHz. Both input and output impedances are matched at 50 ohms. The primary purpose of this amplifier is to be used as the front-end amplifier in a portable commercial receiver with carrier frequencies from 1-2 GHz
Keywords :
MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; impedance matching; integrated circuit layout; low-power electronics; radio receivers; silicon; wideband amplifiers; 1 to 2 GHz; 25 GHz; 26 dB; 3 V; 3.9 to 4 GHz; 6.6 dB; 63 mW; NT25 low-power bipolar technology; Si; Si bipolar process; front-end wideband amplifiers; low-power RF wideband amplifier; portable commercial receiver; Bandwidth; Broadband amplifiers; Circuits; Costs; Impedance matching; Noise figure; Radio frequency; Receivers; Signal processing; Silicon;
Conference_Titel :
Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on
Conference_Location :
Notre Dame, IN
Print_ISBN :
0-8186-8914-5
DOI :
10.1109/MWSCAS.1998.759453
